I’ve created two test files for the Samsung KM4164B-12 64K × 1-bit DRAM using Vetus Pars hardware revision 1.01 with firmware and VetusGUI running 2.0.

Both tests begin with a short address-line check and then exercise all 65,536 memory cells. The memory is treated as 256 rows × 256 columns.

Each row is tested in eight blocks of 32 columns. The display shows progress similar to:

Row 001 / 256
Col 032 / 256

1W1R test

This is the shorter routine screening test.

• Writes one checkerboard value to every cell
• Reads and verifies that value
• Covers all 65,536 cells
• Performs 65,536 writes and 65,536 verified reads
• Alternates the checkerboard polarity by row, so half the cells are tested with 0 and half with 1

Each individual cell is tested at only one logic value. A passing result therefore confirms full-address coverage, but it does not prove that every cell can store both 0 and 1.

2W2R test

This is the more thorough and longer-running test.

• Writes a checkerboard pattern to every cell and verifies it
• Writes the inverse checkerboard pattern and verifies it
• Tests every cell once as 0 and once as 1
• Performs 131,072 writes and 131,072 verified reads

The 2W2R test should take approximately twice as long as 1W1R, in addition to display-update overhead.